Transistores - Bipolar (BJT) - Matrices, pre-sesga | Produtos de semicondutores discretos | 6

RN4910(T5L,F,T)

Parte Stock: 1539

Tipo de transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 4.7 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN1506(TE85L,F)

Parte Stock: 128569

Tipo de transistor: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 4.7 kOhms, Resistencia - Base emisora (R2): 47 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2903FE(TE85L,F)

Parte Stock: 147906

Tipo de transistor: 2 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 22 kOhms, Resistencia - Base emisora (R2): 22 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2511(TE85L,F)

Parte Stock: 175959

Tipo de transistor: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 10 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN4902,LF

Parte Stock: 3229

Tipo de transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 10 kOhms, Resistencia - Base emisora (R2): 10 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 50 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2962FE(TE85L,F)

Parte Stock: 1530

Tipo de transistor: 2 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 10 kOhms, Resistencia - Base emisora (R2): 1 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 50 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1971FE(TE85L,F)

Parte Stock: 1504

Tipo de transistor: 2 NPN - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 10 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN2711(TE85L,F)

Parte Stock: 1466

Tipo de transistor: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 10 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 400 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN2969(TE85L,F)

Parte Stock: 178670

Tipo de transistor: 2 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 47 kOhms, Resistencia - Base emisora (R2): 22 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2902(T5L,F,T)

Parte Stock: 3238

Tipo de transistor: 2 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 10 kOhms, Resistencia - Base emisora (R2): 10 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 50 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2967(TE85L,F)

Parte Stock: 142485

Tipo de transistor: 2 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 10 kOhms, Resistencia - Base emisora (R2): 47 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1906FE,LF(CT

Parte Stock: 162851

Tipo de transistor: 2 NPN - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 4.7 kOhms, Resistencia - Base emisora (R2): 47 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1510(TE85L,F)

Parte Stock: 122352

Tipo de transistor: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 4.7 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN2907(T5L,F,T)

Parte Stock: 1469

Tipo de transistor: 2 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 10 kOhms, Resistencia - Base emisora (R2): 47 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2961FE(TE85L,F)

Parte Stock: 1534

Tipo de transistor: 2 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 4.7 kOhms, Resistencia - Base emisora (R2): 4.7 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 30 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1906,LF

Parte Stock: 1510

Tipo de transistor: 2 NPN - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 4.7 kOhms, Resistencia - Base emisora (R2): 47 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2711JE(TE85L,F)

Parte Stock: 139401

Tipo de transistor: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 10 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN1605TE85LF

Parte Stock: 170733

Tipo de transistor: 2 NPN - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 2.2 kOhms, Resistencia - Base emisora (R2): 47 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1701JE(TE85L,F)

Parte Stock: 13233

Tipo de transistor: 2 NPN - Pre-Biased (Dual) (Emitter Coupled), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 4.7 kOhms, Resistencia - Base emisora (R2): 4.7 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 30 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2601(TE85L,F)

Parte Stock: 9992

Tipo de transistor: 2 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 4.7 kOhms, Resistencia - Base emisora (R2): 4.7 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 30 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2964FE(TE85L,F)

Parte Stock: 1469

Tipo de transistor: 2 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 47 kOhms, Resistencia - Base emisora (R2): 47 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN4911(T5L,F,T)

Parte Stock: 1556

Tipo de transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 10 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN2904FE(T5L,F,T)

Parte Stock: 1469

Tipo de transistor: 2 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 47 kOhms, Resistencia - Base emisora (R2): 47 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN4901,LF

Parte Stock: 1493

Tipo de transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 4.7 kOhms, Resistencia - Base emisora (R2): 4.7 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 30 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1611(TE85L,F)

Parte Stock: 159685

Tipo de transistor: 2 NPN - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 10 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN1963(TE85L,F)

Parte Stock: 101550

Tipo de transistor: 2 NPN - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 22 kOhms, Resistencia - Base emisora (R2): 22 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2902,LF

Parte Stock: 1472

Tipo de transistor: 2 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 10 kOhms, Resistencia - Base emisora (R2): 10 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 50 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2911,LF

Parte Stock: 148274

Tipo de transistor: 2 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 10 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 120 @ 1mA, 5V,

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Toshiba Semiconductor and Storage

RN1969FE(TE85L,F)

Parte Stock: 1468

Tipo de transistor: 2 NPN - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 47 kOhms, Resistencia - Base emisora (R2): 22 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN4984(T5L,F,T)

Parte Stock: 1414

Tipo de transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 47 kOhms, Resistencia - Base emisora (R2): 47 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2903,LF

Parte Stock: 1496

Tipo de transistor: 2 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 22 kOhms, Resistencia - Base emisora (R2): 22 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN4988(T5L,F,T)

Parte Stock: 132419

Tipo de transistor: 1 NPN, 1 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 22 kOhms, Resistencia - Base emisora (R2): 47 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2908FE(TE85L,F)

Parte Stock: 111376

Tipo de transistor: 2 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 22 kOhms, Resistencia - Base emisora (R2): 47 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2709JE(TE85L,F)

Parte Stock: 180658

Tipo de transistor: 2 PNP - Pre-Biased (Dual) (Emitter Coupled), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 47 kOhms, Resistencia - Base emisora (R2): 22 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 70 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN2604(TE85L,F)

Parte Stock: 165277

Tipo de transistor: 2 PNP - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 47 kOhms, Resistencia - Base emisora (R2): 47 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 80 @ 10mA, 5V,

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Toshiba Semiconductor and Storage

RN1902FE,LF(CT

Parte Stock: 121303

Tipo de transistor: 2 NPN - Pre-Biased (Dual), Actual - Colector (Ic) (Máx.): 100mA, Voltaxe: desglose do emisor do colector (máximo): 50V, Resistencia - Base (R1): 10 kOhms, Resistencia - Base emisora (R2): 1 kOhms, Ganancia de corrente continua (hFE) (mín.) @ Ic, Vce: 30 @ 10mA, 5V,

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